3Laboratory for
Electron Microscopy, Karlsruhe Institute of Technology, Engesserstr.
7, D-76131 Karlsruhe, Germany
Growth of multiferroic epitaxial layers of
hexagonal LuFeO3 has been studied by x-ray scattering in-situ during
pulsed-laser deposition (PLD). For this purpose we used a unique PLD chamber attached
to the NANO-beamline of the Institute of Photon Science and Synchrotron
Radiation (IPS) attached to the KARA storage ring (Karlsruhe, Germany). The
LuFeO3 layers have been deposited on single-crystalline sapphire
substrates, in some samples we also deposited thin Pt interlayers prior to the
LuFeO3 growth. In the first part of the talk I report on
grazing-incidence small-angle scattering (GISAXS) measured in-situ during the
Pt deposition. From the data we determined the Pt growth kinetics, in
particular we study the dependence on the island-to-layer percolation threshold
on the substrate temperature [1]. In the second part I discuss the parameters
of the LuFeO3 thin layers and their development during deposition
[2]. The layers are mosaic and we studied the angular mosaic spread and mean
size of the mosaic blocks as functions of the substrate deposition temperature
and of the Pt thickness underneath. The final part of the talk is devoted to
the study of growth oscillations during the LuFeO3 deposition; the oscillations
were recorded by measuring the time dependence of the intensity of the
quasi-forbidden reflex (0003) of LuFeO3. From the data we determined
the growth rate and the height of the Ehrlich-Schwöbel diffusion barrier as functions of the laser
repetition frequency [3].
The
work was supported by the Czech Science Foundation (project No. 19-10799J) and
by the project NanoCent financed by European Regional
Development Fund (ERDF, project No. CZ.02.1.01/0.0/0.0/15.003/0000485). The
additional funding by the German Research Foundation within the framework of
the projects SCHN 669/11 and BA 1642/8-1 is gratefully acknowledged.