X-ray Laue diffraction study of oxygen precipitates in Czochralski silicon
J. Růžička, O. Caha
and M. Meduňa
Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 2, 611 37 Brno, Czech Republic
In the presented article we study oxygen precipitates in annealed Czochralski silicon by means of x-ray diffraction in Laue geometry. Reflection and transmission curves obtained by measurement are compared with curves calculated using Takagi equations and statistical dynamical theory of diffraction. Parameters of the simulations are: relative volume and radii of defects, whose cores are formed by the oxygen precipitates and whose shape we assume to be spherical. Using these two parameters we calculate the absolute concentration of defects inside the crystal. We study the dependency of these parameters on pre-annealing at high temperature, on nucleation temperature and on duration of precipitation anneal.
(extended contribution submitted)