Diffuse x-ray scattering from defects in Si single crystals measured at various temperatures

V. Valeš¹ and V. Holý^2,1

¹Insitute of Condensed Matter Physics, Faculty of Science,

Masaryk University, Kotlářská 2, CZ – 61137 Brno, Czech Republic,

²Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Praha, Czech Republic, 106575@mail.muni.cz

Diffuse x-ray scattering from defects in Czochralski-grown Si wafers (small stacking faults, precipitates of SiO₂, clusters of vacancies or interstitials) is measured at two different temperatures. From the comparison of the reciprocal-space distributions of the intensity scattered at different temperatures we have determined the thermal-diffuse part and the part of the intensity scattered from the structural defects. Since the intensity of thermal diffuse scattering is not affected by the presence of the defects, it can be used as an internal intensity normal. This made it possible to determine reliably the density of structure defects in the wafers.

Full paper has been sent for publication in Materials Structure