X-RAY SCATTERING FROM SELF-ORGANIZED SEMICONDUCTOR NANOSTRUCTURES - OUR RESULTS AND HOPES FOR FUTURE

Václav Holý,

Department of Electronic Structures, Faculty of Mathematics and Physics, Charles University Prague, Czech Republic

The determination of shapes, elastic deformations, and local chemical composition of semiconductor nanostructures (quantum wires and dots) by x-ray scattering is a challenging task requiring to use very intense energy-tunable x-ray sources. The shapes of nanostructures can be studied by small-angle x-ray scattering (the GISAXS method), while the elastic strains and local chemical composition can be determined by diffraction (coplanar x-ray diffraction or grazing-incidence diffraction). Recently, new methods appeared making use of the possibility of energy tuning of the synchrotron radiation, namely anomalous x-ray diffraction close to the absorption edge and diffraction anomalous fine structure method (DAFS) measuring the energy dependence of the diffracted intensity just above the absorption edge. These methods can give direct information on the chemical composition of nanostructures. In the talk, the scattering methods used for nanostructures are briefly summarized, illustrated by experimental results obtained at ESRF.