X - RAY DIFFRACTION AND PHOTOLUMINESCENCE STUDIES ON HYDROGEN - AND OXYGEN - IMPLANTED SILICON ANNEALED AT ARGON PRESSURE UP TO l.2GPa

Andrzei Misiuk¹, Jadwiga Bak-Misiuk², Barbara Surma³, Jan Jun¹, Irina V. Antonova⁴ and Vladimir P. Popov⁴

¹Institute of Electron Technology, Al.Lotnikow 46, 02-ó68 Warsaw, Poland; E-mail misiuk@ite.waw.pl
²Institute of Physics, Polish Academy of Sciences, Al.Lotników 46, 02-6ó8 Warsaw, Poland;
³lnstitute of Electronic Materials Technology, Wólczynska 133, 01-919 Warsaw, Poland;
⁴Institute o Semiconductor Physics, RAS, Novosibirsk 630090, Russia

Enhanced pressure, HP, of argon ambient during annealing (HP - HT treatment) of silicon with oxygen admixture (of concentration up to above 10¹⁸ cm ^-3), introduced during growth of silicon single crystals, results in stress - induced oxygen precipitation, creation of specific oxygen - related thermal donors and in other HP - related phenomena [1]. HP - HT treatment promotes oxygen precipitation from the over-saturated Si-O solid solution with generation of structural defects [2].

In this work we investigate the effect of HP - HT on creation of defects {e.g. insulating Si0₂ precipitates) in silicon implanted by hydrogen, Si:H {dose up to 4x10¹⁶cm^-2) and oxygen, Si:O (dose up to 1 x l Ol&127crri 2). Such treatments are of interest for hydrogen induced silicon sur face layer cleavage [3] and producing of SOI structures [4].

The Si:H and Si:0 structures (the last with local oxygen concentration up to above 3x10²⁰cm^-3) were sequentially HP - HT treated at 720 - l000K and 1230 -1400K (HP up to l.2GPa, argon ambient) and afterwards investigated by X-ray diffraction (reciprocal lattice mapping, determination of lattice parameters), photoluminescence, SIMS, SEM, FTIR and related methods.

HP - HT treatment at 720K resulted in pressure - stimulated creation of thermal donors {related to small oxygen clusters} both in the Si:H and Si:O structures, whereas HP - HT treatment at 1400K caused considerable changes of sample defect structure (e.g. suppression of generation of dislocations, decreased X-ray diffuse scattering), especially in the case of Si:0 structures.

This work was supported in part by the Polish Committee for Scientific Research (grant no. 8T 11B 009 13 ) and the Foundation for Polish - German Collaboration {project no. 1184/LN/94).

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