SOME ASPECTS OF THE X-RAY SMALL-ANGLE SCATTERING METHOD APPLICATION IN MICROELECTRONICS

Anna Savina, Valentina Petrova

Lenin St., 33, Solid State Physics Department, Petrozavodsk State University, Petrozavodsk, 185640, Karelia, Russia, savina@mainpgu.karelia.ru

Keywords: small-angle scattering, anodic aluminium, oxide films, pores, porosity, pore filling.

Widely use of film materials in microelectronics provides entire reveal of the X-ray Small-Angle Scattering metod possibilities for study of morphological peculiarities of the films structure. The basic defects of oxide films structure which cause the high level of scattering near of the X-ray primary beam are micro- and submicropores. Pores in films may be open or isolated, they me be distributed in volume chaotically or with some order. In some samples we may observe both separate "islands" and pores connected with other ones forming one system. They may be widely size distrubuted or characterized by only few size fraction.

Special methodical ways of small-angle patterns obtaining and their interpretation methods, developed by us, allow to obtain data concerning microporous structure of film system and define the most useful technological conditions which are suitable for industrial use.

Recent years porous layers have been used for obtaining compact films system by pore filling. We have studied kinetic peculiarities of thick compact layers created on the base of porous anode oxide aluminium films by pore filling, for example, by polymer filler and devised the method of pore filling effeciency control. The method can be used at the working up of the compact oxide system elaboration.